WebIn this manner, dual gating facilitates the full utilization and integration of memtransistor functionality in highly scaled crossbar circuits. Furthermore, the tunability of long-term … WebDec 2, 2024 · Here, the experimental realization of lateral memtransistors from monolayer single-crystal molybdenum disulfide (MoS 2) utilizing a focused helium ion beam is reported. Site-specific irradiation with the …
Publications The Hersam Research Group
Weba) Schematic illustration of a dual‐gated MoS2 memtransistor crossbar array with global silicon bottom gate (word line 1, WL1) and local top gate electrodes (word line 2, WL2) … WebSep 6, 2024 · Dual‐Gated MoS2 Memtransistor Crossbar Array. Memristive systems offer biomimetic functions that are being actively explored for energy‐efficient neuromorphic … pw lotus
Dual-Gated MoS2 Memtransistor Crossbar Array — Kyung Hee …
WebIn this manner, dual gating facilitates the full utilization and integration of memtransistor functionality in highly scaled crossbar circuits. Furthermore, the tunability of long-term … Dual-Gated MoS 2 Memtransistor Crossbar Array. Hong-Sub Lee, Hong-Sub Lee. … We would like to show you a description here but the site won’t allow us. WebNov 20, 2024 · Moreover, the switching ratio can be further improved to ∼10 6 through a combination of electric and light dual gating. Such a gating effect can be ascribed to the … WebJan 31, 2024 · A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS 2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. pw lampu sukoharjo